rf0101 1 , rev . c (9/ 3 0 /13) ?201 3 microsemi corporation page 1 of 7 m 1 5kp 22a ? m 1 5kp 28 0ca ( e3 ) available 15 ,000 watt transient voltage suppressor (tvs) p rotection d evice screening in reference to mil - prf - 19500 available description this transient voltage suppressor se ries of m 15kp22a ? m 15kp280ca offer s an extended voltage range and also provide s a variety of high reliability , uni - and bi - directional options as well . rohs compliant versions are also available. these devices have the ability to clamp dangerous high voltage tr ansients such as secondary effects of lightning strikes, providing circuit protection to several class levels in the iec61000 - 4 - 5 specification. clamping time is virtually instantaneous. it also provides protection from transients caused by inductive load dumps, rfi, and esd, providing protection to iec61000 - 4 - 2 and - 4 - 4. case 5a (do - 204ar) package important: for the latest information, visit our website http://www.microsemi.com . fea tures ? available in both unidirectional and bidirectional configurations ? 3 lot norm screening performed on standby current i d ? 100% surge tested devices ? suppresses transients up to 15 kw @ 10/1000 s and 100 kw @ 8/20 s (see fi gure 1 ) ? various s creening s in reference to mil - prf -19500 are available . refer to hirel non - hermetic product portfolio for more details on the screening options . (see part nomenclature for all options.) ? high reliability controlled devices have wafer fabricatio n and assembly lot traceability ? moisture classification is l evel 1 with no dry pack required per ipc/jedec j - std -020b ? rohs compliant versions are available applications / benefits ? selections fr om 22 to 28 0 volts stand- off voltage (v wm ) ? economical tvs ser ies for thru - hole mounting ? protection from switching transients & induced rf i ? fast sub - nanosecond response (unidirectional) ? compliant to iec 610 00-4 - 2 a n d iec 6 1 000 -4 - 4 for esd and eft protection respectively ? secondary lightning protection per iec61000 - 4 -5 with 4 2 o hms source impedance : class 1, 2, 3, 4: m 1 5kp 22a to m 1 5kp 28 0ca class 5: m 1 5kp 22a to m 1 5kp 28 0ca (short distance) class 5: 1 m 5 kp22a to m 1 5kp 110 ca (long distance) ? secondary lightning protection per iec61000 - 4 - 5 with 1 2 o hms source impedance : class 1 & 2: m 15kp22a to m 15kp280ca class 3: m 15kp22a to m 15kp240ca class 4: m 15kp22a to m 15kp120ca ? secondary lightning protection per iec61000 - 4 - 5 with 2 ohms source impedance: class 2: m 15kp22a to m 15kp220ca class 3: m 15kp22a to m 15kp110ca class 4: m 15kp22a to m 15kp54ca msc ? lawrence 6 lake street, lawrence, ma 01841 1 -800- 446 - 1158 or (978) 620- 2600 fax: (978) 689 - 0803 msc ? ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com
rf0101 1 , rev . c (9/ 3 0 /13) ?201 3 microsemi corporation page 2 of 7 m 1 5kp 22a ? m 1 5kp 28 0ca ( e3 ) maximum rat ings @ 25 oc unless otherwise noted parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +150 o c thermal resistance, junction to lead @ 3/8 inch (10 mm) lead length from body r ? jl 2 0 o c/w thermal resistanc e, junction to ambient (1) r ? ja 8 0 o c/w peak pulse power dissipation (2) 10/1000us p pp 1 5 , 000 w steady - state power dissipation @ t l = 30 oc 3/8 inch (10 mm) from body p d 6 1. 56 (1) w t clamping (0 volts to v ( br) min , theoretical ) unidirectional bid irectional < 100 < 5 ps ns surge peak forward current (3) i fsm 200 a solder temperature @ 10 s 260 o c notes : 1. w hen mounted on fr4 pc board with 4 mm 2 copper pads (1 oz) and track width 1 mm, length 25 mm . 2. with impulse repetition rate (dut y factor) of 0.01 % or less (also figure s 1 and 2 ). 3. at 8.3 ms half - sine wave for unidirectional devices only. mechanical and packaging ? case: void - free transfer molded thermosetting epoxy body meeting ul94v -0. ? terminals : tin - lead or rohs c ompliant annealed m atte -t in plating . s olderable per mil- std - 750, method 2026. ? marking: p art number. ? polarity: cathode indicated by band. no cathode band on bidirectional devices . ? tape & reel option: standard per eia - 296 (add ?tr? suffix to part number) . consult factory for quantities. ? weight: approximately 1.4 grams . ? see p ackage d imensions on last page. part nomenclature m 1 5 k p 22 c a (e3) reliability level * m ma mx mxl (* s ee hirel non - hermetic product portfolio ) peak pulse power kilowatt rating encapsulated plastic package rohs comp liance e3 = rohs c ompliant blank = non - rohs c ompliant voltage tolerance a = 5% tolerance level polarity c = bi - directional blank = unidirectional stand - off voltage rating (see electrical characteristics table)
rf0101 1 , rev . c (9/ 3 0 /13) ?201 3 microsemi corporation page 3 of 7 m 1 5kp 22a ? m 1 5kp 28 0ca ( e3 ) symbols & definitions symbol definition v(br) temperature coefficient of breakdown voltage: the change in breakdown voltage divided by the change in temperature that caused it expressed in %/ c or mv/ c. i (br) breakdown current : the current u sed for measuring breakdown voltage v (br) . i d standby current: the current through the device at rated stand - off voltage. i fsm surge peak forward current: the forward current including all nonrepetitive transient currents but excluding all repetitive t ransients (ref jesd282 - b ). i pp peak impulse current: the maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. a random recurring or nonrepetitive transient current is usually due to a n external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. p pp peak pulse power. the rated random recurring peak impulse power or rated nonrepetitive peak impulse power. the impulse power is t he maximum - rated value of the product of i pp and v c . v (br) breakdown voltage: the voltage across the device at a specified current i (br) in the breakdown region. v c clamping voltage: the voltage across the device in a region of low differential resista nce during the application of an impulse current (i pp ) for a specified waveform. v wm wo rking s tandoff v oltage: the maximum - rated value of dc or repetitive peak positive cathode - to - anode voltage that may be continuously applied over the standard operating temperature.
rf0101 1 , rev . c (9/ 3 0 /13) ?201 3 microsemi corporation page 4 of 7 m 1 5kp 22a ? m 1 5kp 28 0ca ( e3 ) electrical characteristics @ 25 oc p a r t num b e r reverse stand - off voltage v wm (note 1) breakdown voltage v (br) @ i (br) maximum clamping voltage v c @ i pp maximum standby current i d @ v wm maximum peak pulse current i pp (fig. 2) maximum temperature coefficient of v (br) v(br) v v m a v a a m v / o c m15kp 22 a 22 24.4 10 37.1 500 404 24 m15kp 24 a m15kp 26 a 24 26 26.7 28.9 5 5 40.7 44.0 150 50 369 341 27 29 m15kp 28 a m15kp 30 a 28 30 31.1 33.3 5 5 47.5 50.7 25 15 316 296 31 34 m15kp 33 a m15kp 36 a 33 36 36.7 40.0 5 5 54.8 59.7 10 10 274 251 38 41 m15kp 40 a m15kp 43 a 40 43 44.4 47.8 5 5 65.8 69.7 10 10 228 215 46 50 m15kp 45 a m15kp 48 a 45 48 50.0 53.3 5 5 73.0 77.7 10 10 205 193 52 56 m15kp 51 a m15kp 54 a 51 54 56.7 60.0 5 5 82.8 87.5 10 10 181 171 60 63 m15kp 58 a m15kp 60 a 58 60 64.4 6 6.7 5 5 94.0 97.3 10 10 160 154 68 71 m15kp 64 a m15kp 70 a 64 70 71.1 77.8 5 5 104 114 10 10 144 132 76 83 m15kp 75 a m15kp 78 a 75 78 83.3 86.7 5 5 122 126 10 10 123 119 89 93 m15kp 85 a m15kp 90 a 85 90 94.4 100 5 5 137 146 10 10 109 103 102 109 m15kp 1 0 0 a m15kp 1 1 0 a 100 110 111 122 5 5 162 178 10 10 93 84 121 133 m15kp 1 2 0 a m15kp 1 3 0 a 120 130 133 144 5 5 193 209 10 10 78 72 145 157 m15kp 1 5 0 a m15kp 1 6 0 a 150 160 167 178 5 5 243 259 10 10 62 58 183 195 m15kp 1 7 0 a m15kp 1 8 0 a 170 180 189 200 5 5 275 291 10 10 55 52 207 219 m15kp 2 0 0 a m15kp 2 2 0 a 200 220 222 245 5 5 322 356 10 10 47 42 243 269 m15kp 2 4 0 a m15kp 2 6 0 a 240 260 267 289 5 5 388 419 10 10 39 36 293 317 m15kp 2 8 0 a 280 311 5 452 10 33 342 ** c onsul t f a c t o ry fo r a v ail a bi l i t y o f t h e 1 7 a n d 1 8 v ol t dev i c e s o n a s pec ia l o r de r b a si s . note s: 1. transient voltage suppressors are normally selected with reverse ? stand - o ff v oltage? ( v wm ) w hich should be equal to or greater than the dc or continuous peak operatin g voltage level .
rf0101 1 , rev . c (9/ 3 0 /13) ?201 3 microsemi corporation page 5 of 7 m 1 5kp 22a ? m 1 5kp 28 0ca ( e3 ) graphs t d ? pulse width figure 1 pea k pulse power rating curve t ? time ? ms test waveform parameters: tr=10 s, tp=1000 s figure 2 pulse waveform for 10/1000 s exponential surge pulse current in percent of i pp p pp ? peak pulse power ( kw) waveform non - repet itive
rf0101 1 , rev . c (9/ 3 0 /13) ?201 3 microsemi corporation page 6 of 7 m 1 5kp 22a ? m 1 5kp 28 0ca ( e3 ) graphs (continued) v (br) ? reverse breakdown voltage (v) figure 3 typical junction ca pacitance n o t e: for b idi rec t io na l c o n st ru c t io n , c ap a c i t a n c e w ill b e on e - ha lf t h a t s ho w n. lead or ambient temperature c figure 4 derating curve c , capacitance (p f ) peak pulse power (p pp ) or continuous average power in percent of 25c
rf0101 1 , rev . c (9/ 3 0 /13) ?201 3 microsemi corporation page 7 of 7 m 1 5kp 22a ? m 1 5kp 28 0ca ( e3 ) package dimensions dimensions dim inch millimeters min max min max ll 0.750 - 19.05 - b l 0.3 65 0.385 9.27 9.78 bd 0. 235 0. 255 5.97 6.48 ld 0.0 47 0.053 1.194 1.346
|
